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The PMBFJ109,215 is an N-channel junction FET housed in a SOT-23 surface-mount package. It supports a drain-source voltage of ±25 V and a gate-source breakdown voltage of -25 V. The device features a maximum total power dissipation of 250 mW at 25 °C. Static characteristics include a drain-source leakage current of up to 40 mA at VGS=0V and VDS=15V, with a gate-source cut-off voltage ranging from -6 V to -2 V. The drain-source on-state resistance is specified at a maximum of 12 Ω under zero gate bias conditions.
Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component status remains active production rather than obsolete or limited stock. Ensure the marking code '39' aligns with the manufacturing origin requirements for your assembly process. Cross-reference the RoHS compliance status against current environmental regulations applicable to your region before finalizing procurement orders.
Select this component when symmetrical N-channel JFET performance is required in a compact SOT-23 footprint. The interchangeable drain-source pins simplify PCB routing compared to asymmetric alternatives. Choose this part over PMBFJ108 if a higher on-state resistance is acceptable, or over PMBFJ110 if a lower cut-off voltage range is necessary for specific biasing applications.
This device belongs to the PMBFJ108/109/110 family of N-channel junction FETs manufactured by NXP Semiconductors. All three variants share identical pinouts, packages, and absolute maximum ratings. They are distinguished primarily by their static electrical parameters, specifically the drain-source leakage current and gate-source cut-off voltage ranges, allowing designers to select the precise transfer characteristic needed.
PMBFJ108 and PMBFJ110 are direct pin-compatible substitutes within the same series. Verify that the alternative variant's static parameters fit the specific circuit requirements before swapping.
The drain and source connections are fully interchangeable, allowing either terminal to be used as the drain or source.
The maximum gate-source voltage is limited to -25 V according to the absolute maximum rating system.
The primary difference lies in the static characteristics; the PMBFJ109 has a higher drain-source leakage current (up to 40 mA) and a different gate-source cut-off voltage range compared to the PMBFJ108.