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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：10 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 10V (VGS)
- Resistance - RDS(On)：30 Ohms
- Power - Max：300 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ111,215 is an N-channel junction FET in a SOT23 surface-mount package. It features high-speed switching and interchangeable drain-source connections. The device exhibits low on-state resistance at zero gate voltage, specifically less than 30 ohms for the PMBFJ111 variant. Key electrical limits include a drain-source voltage of ±40 V and a total power dissipation of 300 mW at 25 °C ambient temperature. Static characteristics specify a maximum gate-source leakage current of -1 nA at -15 V. Dynamic performance includes typical input capacitance of 6 pF and turn-on time of 13 ns under defined test conditions.
Feature Summary
- High-speed switching capability
- Interchangeable drain and source connections
- Low on-state resistance at zero gate voltage
Applications
- Analog switches
- Choppers
- Commutators
- Multiplexers
- Thin and thick film hybrids
Procurement Notes
Verify the specific ordering suffix to confirm manufacturing origin, as codes indicate production in Hong Kong, Malaysia, or China. Ensure the selected part number matches the required package version and marking code. Confirm product status and availability through official NXP channels before design finalization.
Selection Notes
Select this component for applications requiring symmetrical N-channel junction FETs with low on-resistance. Consider the SOT23 package constraints for thermal management and board space. Evaluate static and dynamic parameters against circuit requirements, particularly regarding leakage currents and switching speeds.
Part Context
This device belongs to a family of N-channel junction FETs including PMBFJ112 and PMBFJ113. These components share similar packaging and functional principles but differ in on-state resistance values. The PMBFJ111 offers the lowest resistance among the series variants.
Replacement Considerations
PMBFJ112 and PMBFJ113 are related parts within the same data sheet document. Substitution requires verification of on-state resistance differences and matching package specifications.
FAQ
Are the drain and source terminals interchangeable?
Yes, the drain and source connections are interchangeable for the PMBFJ111.
What is the maximum drain-source voltage rating?
The maximum DC drain-source voltage is ±40 V.
What is the typical turn-on time?
The typical turn-on time is 13 ns under specified test conditions.
