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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：6pF @ 10V (VGS)
- Resistance - RDS(On)：100 Ohms
- Power - Max：300 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ113,215 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by NXP Semiconductors. It is housed in a TO-236AB (SOT-23) surface-mount package with three terminals. Key electrical specifications include a maximum drain-source voltage of 40 V and a maximum gate-source voltage of -40 V. The device features a minimum drain-source cutoff current (Idss) of 2 mA and a maximum drain-source resistance of 100 Ω. It operates within a temperature range of -65 °C to +150 °C.
Feature Summary
- N-channel JFET configuration for signal processing applications
- Compact TO-236AB surface-mount package design
- High thermal stability supporting extended operating temperatures
Applications
- Low-noise amplifier circuits
- Analog switch implementations
- Impedance matching networks
Procurement Notes
Verify component authenticity through authorized distribution channels due to the part's obsolete status. Confirm package integrity and pin alignment against the TO-236AB specification sheet prior to integration. Ensure storage conditions maintain moisture sensitivity levels appropriate for surface-mount devices to prevent soldering defects during assembly processes.
Selection Notes
Select this component for designs requiring low input impedance and high linearity in analog signal paths. Consider the 40 V breakdown rating and 2 mA Idss minimum when designing biasing networks. Evaluate thermal management requirements given the +150 °C maximum junction temperature capability and small form factor constraints inherent to the SOT-23 footprint.
Part Context
This N-channel JFET belongs to NXP's discrete semiconductor portfolio, specifically designed for general-purpose analog switching and amplification tasks. The TO-236AB packaging facilitates automated surface-mount assembly, aligning with industry standards for compact electronic modules. It serves as a foundational active component in mixed-signal circuit architectures requiring precise current control.
Replacement Considerations
The PMBFJ113,215 is listed as obsolete. Verify functional equivalents such as the PMBFJ309,215 for potential substitution, ensuring compatibility with existing board layouts and electrical parameters before implementation.
