PMBFJ175,215

Overview

The PMBFJ175,215 is a P-channel silicon junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-23 surface-mount package with three leads. The device features symmetrical construction allowing interchangeable drain and source connections. Key electrical parameters include a maximum drain-source voltage of 30 V and a gate-source breakdown voltage of 30 V. Under standard conditions (-VDS = 15 V; VGS = 0 V), the typical drain current is 7 mA with a range of 7 to 70 mA. The typical drain-source on-resistance is 125 Ω at -VDS = 0.1 V and VGS = 0 V.

Feature Summary

• Symmetrical p-channel junction FET design enabling interchangeable drain and source terminals for flexible circuit layout.

Applications

• Analogue switches
• Choppers
• Commutators

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets RoHS compliance standards as indicated in the product specification. Ensure the supply chain provides valid traceability documentation consistent with NXP Semiconductors' commercial terms. Cross-reference the marking code '6W' against the manufacturing site requirements to ensure authenticity and correct part identification.

Selection Notes

Select this component when a low-voltage, small-signal P-channel JFET is required for analogue switching applications. The 125 Ω on-resistance and 7 mA typical drain current define its operational limits compared to other variants in the series. Consider the SOT-23 package constraints for thermal dissipation and board space. Evaluate the interchangeability feature if bidirectional signal routing is necessary within the design architecture.

Part Context

This device belongs to the PMBFJ174 through PMBFJ177 family of P-channel silicon field-effect transistors. All members share the same SOT-23 package and general description but differ in specific electrical characteristics such as drain current and on-resistance. This family is designed for use with surface mount technology in compact electronic assemblies requiring analogue signal control.

Replacement Considerations

PMBFJ174, PMBFJ176, and PMBFJ177 are documented substitutes within the same product family sharing the SOT-23 envelope. Verify that the alternative variant's drain current and on-resistance specifications align with the original circuit requirements before substitution.

FAQ

Can the drain and source terminals be swapped?

Yes, the PMBFJ175 is a symmetrical device, meaning the drain and source connections are interchangeable.

What is the maximum power dissipation?

The total power dissipation is rated at 300 mW when the ambient temperature is up to 25 °C.

What is the gate cut-off current specification?

The gate cut-off current (IGSS) is typically 1 nA or less when VGS is 20 V and VDS is 0 V.