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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：24 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：50 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ310,215 is a symmetrical N-channel silicon junction field-effect transistor housed in a SOT23 plastic surface-mounted package. It features a drain-source voltage rating of ±25 V and a gate-source cut-off voltage range of -2 V to -6.5 V. The device supports a drain current (IDSS) between 24 mA and 60 mA at VGS=0V and VDS=10V. Total power dissipation is rated at 250 mW up to an ambient temperature of 25 °C. Forward transfer admittance is specified at a minimum of 10 mS under standard test conditions.
Feature Summary
- Symmetrical construction allowing interchangeability of drain and source connections
- Low noise performance suitable for sensitive signal processing
- High gain characteristics for effective amplification
Applications
- AM input stage in car radios
- VHF amplifiers
- Oscillators and mixers
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity configuration. Confirm that the component status remains active for production use. Ensure ESD handling protocols are strictly followed during transport and assembly due to device sensitivity. Cross-reference the marking code '50' with the manufacturing origin to validate authenticity against the official datasheet specifications.
Selection Notes
Select this component when symmetrical JFET operation is required to simplify circuit layout by allowing interchangeable pin usage. Choose based on the specific gate-source cut-off voltage requirements within the -2 V to -6.5 V range. Consider the low noise profile for high-fidelity audio or RF front-end applications. Ensure the thermal resistance and power dissipation limits align with the system's ambient operating conditions.
Part Context
This device belongs to the PMBFJ308/309/310 family of N-channel silicon junction field-effect transistors. All variants share the same SOT23 package and general electrical structure but differ primarily in their gate-source cut-off voltage and drain current specifications. This family is designed for general-purpose low-noise amplification tasks in consumer and automotive electronics.
Replacement Considerations
PMBFJ308 and PMBFJ309 are direct functional substitutes within the same package. Verify that the replacement part's gate-source cut-off voltage range meets the specific biasing requirements of the original design.
FAQ
Can the drain and source pins be swapped?
Yes, the PMBFJ310 is a symmetrical device, meaning the drain and source connections are interchangeable without affecting functionality.
What is the maximum drain-source voltage?
The absolute maximum DC drain-source voltage rating is ±25 V.
How does the gate-source cut-off voltage vary?
For the PMBFJ310, the gate-source cut-off voltage ranges from a minimum of -2 V to a maximum of -6.5 V under specified test conditions.
