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The PMBT2222AYS is a double NPN switching transistor manufactured by Nexperia, housed in a TSSOP6 (SOT363-3) surface-mounted plastic package. It contains two independent NPN transistors within a single device. Key electrical parameters include a collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 600 mA per transistor. The DC current gain (hFE) ranges from 100 to 300 at IC = 150 mA. The transition frequency (fT) is 300 MHz. Total power dissipation is limited to 250 mW per transistor or 400 mW for the entire device at Tamb ≤ 25 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the SOT363-3 package variant matches the design footprint requirements. Check for any recent revision history updates regarding package changes or parameter adjustments before finalizing procurement specifications.
Select this component when space-constrained designs require two NPN switching functions in a compact SMD form factor. Ensure the application operates within the 40 V collector-emitter voltage limit and 600 mA current constraints. Consider the thermal resistance characteristics if operating near maximum power dissipation limits in free air or on PCBs.
This device serves as the double NPN counterpart to the PMBT2907AYS, which is the double PNP switching transistor. Both components share similar packaging and performance characteristics, facilitating complementary push-pull or differential circuit designs in compact surface-mount applications.
PMBT2907AYS