SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PMBT3904YSRH is an NPN/NPN general-purpose double transistor manufactured by Nexperia. It is housed in a TSSOP6 (SOT363-3) plastic surface-mounted device package. The component supports a collector-emitter voltage of 40 V and a continuous collector current of 200 mA per transistor. Key electrical parameters include a DC current gain ranging from 100 to 300 at IC = 10 mA, and a transition frequency of 300 MHz. Total power dissipation is rated at 350 mW for the device and 230 mW per transistor at 25 °C ambient temperature. Operating junction temperatures extend up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package variant and marking code alignment. Confirm RoHS compliance status through the latest product data sheet revision. Cross-reference the part number with authorized distributor catalogs to validate availability and sourcing channels before finalizing procurement plans.
Select this component for designs requiring dual NPN transistors in minimal footprint applications. Ensure the circuit operates within the 40 V collector-emitter voltage limit and 200 mA current constraints. Verify thermal management requirements against the 350 mW total power dissipation rating under expected ambient conditions.
This part belongs to the PMBT3904 series of general-purpose NPN/NPN double transistors. The 'YSR' designation indicates the specific TSSOP6 (SOT363-3) package version. It serves as a compact alternative to discrete single transistors in space-constrained printed circuit board layouts.
PMBT3904VS
The maximum collector-base voltage (VCBO) is 60 V.
The typical DC current gain (hFE) is 180 when VCE = 1 V and IC = 10 mA at 25 °C.
No, unless explicitly stated in the data sheet, the product is not suitable for automotive use and is not qualified according to AEC-Q101.