PMBT3906YS,115

Overview

The PMBT3906YS,115 is a PNP/PNP general-purpose double transistor manufactured by Nexperia. It is housed in a very small SOT363-3 (SC-88) Surface-Mounted Device plastic package with six leads. The device features a collector-emitter voltage of -40 V and a continuous collector current of -200 mA per transistor. DC current gain ranges from 100 to 300 at a collector current of -10 mA. Total power dissipation is rated at 230 mW per transistor and 350 mW for the entire device at an ambient temperature of 25 °C. The transition frequency is typically 250 MHz.

Feature Summary

• General-purpose double transistor configuration
• Board-space reduction through compact packaging

Applications

• General-purpose switching
• Amplification

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm the exact reel quantity and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements as stated in the product data sheet before finalizing procurement orders.

Selection Notes

Select this component when dual PNP transistors are required in a minimal footprint. Ensure the design accommodates the -40 V collector-emitter voltage limit and the 230 mW per-transistor power dissipation rating under expected operating conditions.

Part Context

This part serves as a complementary device within the Nexperia BJT portfolio. The NPN/NPN complement is the PMBT3904YS, while the NPN/PNP complement is the PMBT3946YPN. All variants share similar electrical characteristics adapted for their respective configurations.

Replacement Considerations

Direct functional substitutes include the PMBT3904YS for NPN/NPN applications and the PMBT3946YPN for NPN/PNP configurations. Verify pin compatibility and thermal ratings when substituting.