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The PMBT3946YPN,125 is a general-purpose NPN/PNP double transistor manufactured by Nexperia in a SOT363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 40 V and a continuous collector current of 200 mA per transistor. The device has a total power dissipation of 350 mW at 25 °C ambient temperature. Key electrical characteristics include a DC current gain (hFE) minimum of 100 for the NPN transistor and 30 for the PNP transistor at specified test conditions. Transition frequencies are rated at 300 MHz for the NPN and 250 MHz for the PNP.
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Select this component when space-constrained designs require complementary NPN and PNP transistors in a single package. Ensure the application voltage does not exceed 40 V and current stays within 200 mA limits. Consider thermal derating if operating above 25 °C ambient temperature to maintain reliability within the 350 mW dissipation limit.
This part belongs to the PMBT3946YPN family of dual transistors. Complementary configurations include the PMBT3904YS (NPN/NPN) and PMBT3906YS (PNP/PNP). The device is designed for high-volume manufacturing and offers consistent performance across temperature ranges suitable for consumer and industrial electronics.
Direct replacements must match the SOT363 footprint and electrical ratings. Verify pinout compatibility as some dual transistors use different internal arrangements. Check hFE gain ranges and saturation voltages to ensure circuit functionality remains unchanged during substitution.
The marking code is BB followed by a placeholder character representing the manufacturing site code.
Yes, the PMBT3946YPN is qualified in accordance with the AEC-Q101 standard for discrete semiconductors.
The maximum junction temperature is 150 °C.