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The PMC85XP is a 30 V P-channel Trench MOSFET integrated with an NPN Resistor-Equipped Transistor (RET) in a DFN2020-6 package. The MOSFET features a drain-source voltage of -30 V, a typical on-state resistance of 85 mΩ at VGS = -4.5 V, and a continuous drain current of -2.6 A. The NPN RET provides a collector-emitter voltage of 50 V, an output current of 100 mA, and built-in bias resistors R1 (typical 4.7 kΩ) and R2 (typical 47 kΩ).
Verify the specific ordering suffix to confirm packaging details, as the datasheet identifies the standard type number PMC85XP in the DFN2020-6 package. Confirm that the component meets your thermal requirements given the junction-to-ambient resistance values provided in the data sheet. Ensure design compatibility with the specified gate-source voltage limits and threshold characteristics before finalizing procurement.
Select this component when a compact solution combining a high-side P-channel switch and a pre-biased NPN driver is required. The low on-state resistance supports efficient power handling, while the integrated resistors reduce external component count. Verify that the operating voltage and current levels remain within the absolute maximum ratings defined in the limiting values table.
This device belongs to Nexperia's portfolio of combined MOSFET and transistor solutions designed for space-constrained applications. It utilizes Trench MOSFET technology to achieve fast switching speeds and low conduction losses. The integration of the NPN RET allows for direct interfacing with logic-level control signals without additional discrete biasing components.
No public confirmed substitute part numbers are documented in the provided source material.