PMCM650CVNEZ

Overview

The PMCM650CVNEZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology and is housed in a compact 6-WLCSP package measuring 1.48 x 0.98 mm. The device features a common-drain configuration, enabling bi-directional current flow. Key electrical parameters include a drain-source voltage of 20 V and a maximum power dissipation of 556 mW at ambient temperature. The gate threshold voltage is specified at a maximum of 900 mV at 250 µA, with a maximum gate charge of 13 nC at 4.5 V.

Feature Summary

• Common-drain architecture supporting bi-directional current flow
• Ultra-small 6-WLCSP footprint for space-constrained designs
• Trench MOSFET technology for enhanced performance
• Low threshold voltage operation

Applications

• Load switch circuits
• Battery protection systems
• Battery management units

Procurement Notes

Verify the specific suffix 'V' against official Nexperia documentation to confirm pinout and electrical characteristics, as suffixes often denote distinct variants within the PMCM650 family. Confirm availability status, as related models in this series have been subject to End-of-Life notices. Ensure compliance with RoHS3 standards and check for any recent Product Change Notifications regarding labeling or packaging updates before finalizing procurement.

Selection Notes

Select this component for applications requiring bidirectional current handling in minimal board space. The common-drain topology is suitable for low-side switching or protection roles where source and drain potentials may vary. Evaluate thermal constraints carefully due to the small WLCSP package and limited power dissipation rating. Compare gate charge specifications against driver capabilities to ensure efficient switching performance.

Part Context

This part belongs to the Nexperia PMCM650 series of MOSFETs in Wafer Level Chip-Size Packages. These devices are designed for portable electronics and battery-powered applications where size and efficiency are critical. The series leverages Trench technology to provide robust performance in a form factor significantly smaller than traditional surface-mount packages.

Replacement Considerations

Publicly confirmed substitute part numbers for the PMCM650CVNEZ were not found in the provided reference data. Verify compatibility with existing circuit designs if considering alternative dual N-channel WLCSP MOSFETs from other manufacturers.