PMD4001K,115

Overview

The PMD4001K is a dual-component device integrating an NPN transistor and a high-speed switching diode within a SOT346 (SC-59A/TO-236) plastic surface-mounted package. The NPN transistor provides a collector-emitter voltage of 40 V, a continuous collector current of 0.1 A, and a peak collector current of 0.2 A. The integrated diode supports a forward current of -0.2 A with a forward voltage of -1.1 V at -200 mA. Total power dissipation ranges from 230 mW to 375 mW depending on the PCB mounting conditions.

Feature Summary

• Integrates an NPN transistor and a high-speed switching diode in a single compact package
• Features application-optimized pinout designed specifically for MOSFET driver circuits
• Internal connections minimize layout effort and reduce overall component count
• Diode configuration protects the base-emitter junction against reverse direction stress

Applications

• Power MOSFET driver circuits

Procurement Notes

Verify the specific ordering suffix matches the required packing method, as the datasheet indicates variations such as tape and reel configurations. Confirm that the procurement documentation aligns with the product status defined in the latest NXP data sheet revision. Ensure compliance with the absolute maximum rating system specifications during design integration to prevent permanent damage.

Selection Notes

Select this component when space-saving solutions are required for driving power MOSFETs. The internal diode eliminates the need for external protection components across the base-emitter junction. Evaluate thermal resistance requirements based on the specific PCB material, noting differences between FR4 and ceramic substrates for accurate power dissipation calculations.

Part Context

This device belongs to the category of general-purpose discrete semiconductors manufactured by NXP Semiconductors. It serves as a specialized solution for gate drive applications where minimizing board space and simplifying assembly are critical design constraints. The integration of active switching and protective elements into one footprint distinguishes it from standard standalone transistors or diodes.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.