PMD4003K,115

PMD4003K,115

  • Description:IC MOSFET DRIVER SC-59A
  • Series:-

SKU:b3b2e3ef43e0 Category: Brand:

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Product Detailed Parameters

  • Description:IC MOSFET DRIVER SC-59A
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN + Base-Emitter Diode
  • Applications:Gate Driver
  • Voltage - Rated:40V
  • Current Rating (Amps):1A
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK

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PMD4003K,115

Overview

The PMD4003K is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor paired with a high-speed switching diode, housed in a SOT346 (SC-59A/TO-236) plastic surface-mounted package. The device features a collector-emitter voltage of 40 V and a continuous collector current of 1 A. It includes a built-in diode for base-emitter junction protection with a forward current rating of -0.2 A. Key electrical characteristics include a typical DC current gain (hFE) of 450 at 1 mA and a maximum collector-base cut-off current of 100 nA.

Feature Summary

  • Integrates a low saturation voltage NPN transistor with a high-speed switching diode to protect the base-emitter junction.
  • Features an application-optimized pinout and internal connections designed to minimize layout effort and reduce component count.
  • Provides a space-saving solution suitable for compact power MOSFET driver applications.

Applications

  • Power MOSFET driver

Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packing quantity and tape-and-reel specifications. Confirm that the requested part number matches the exact marking code 'D3' and package version SOT346 as defined in the manufacturer's ordering information table. Ensure compatibility with standard FR4 or ceramic PCB mounting requirements specified in the thermal characteristics section.

Selection Notes

Select this component when a compact solution is required for driving power MOSFETs with minimal layout complexity. The integrated BISS transistor offers low saturation voltage for efficient switching, while the internal diode eliminates the need for external protection components. Consider the 40 V collector-emitter voltage rating and 1 A current capability to ensure adequate headroom for the target circuit design.

Part Context

This component belongs to NXP's portfolio of small signal transistors and discrete drivers. It is categorized under general-purpose semiconductor devices intended for surface-mount assembly. The SOT346 package allows for automated placement in high-volume manufacturing environments, supporting designs where board space is constrained.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the function of the internal diode in the PMD4003K?

The internal high-speed switching diode is connected to protect the base-emitter junction of the NPN transistor in the reverse direction.

What is the maximum peak collector current for the PMD4003K?

The maximum peak collector current is 2 A for a single pulse with a duration of tp ≤ 1 ms.

Which package type does the PMD4003K use?

The PMD4003K uses the SOT346 package, also known as SC-59A or TO-236, which is a small Surface-Mounted Device plastic package with three leads.

PMD4003K,115PMD4003K,115

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