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The PMD5001K is a PNP transistor and high-speed switching diode integrated in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device plastic package. It functions as a MOSFET driver with an internal diode to protect the base-emitter junction in reverse direction. The PNP transistor features a collector-emitter voltage of -40 V, a collector current of -0.1 A, and a peak collector current of -0.2 A. The integrated diode supports a forward current of 0.2 A with a maximum forward voltage of 1.1 V at 200 mA.
Verify the specific ordering suffix matches the required packing method, such as tape and reel quantities. Confirm the device status and revision history against the most recent NXP documentation before design finalization. Ensure compatibility with standard FR4 or ceramic PCB mounting footprints for thermal performance validation.
Select this component when a compact MOSFET driver solution is required that includes inherent base-emitter protection. The SOT346 package is suitable for space-constrained designs. Evaluate thermal resistance requirements based on the specific PCB material, such as FR4 or Al2O3 ceramic, to ensure power dissipation limits are not exceeded during operation.
This device belongs to the category of discrete semiconductor components designed for circuit protection and driving applications. It combines bipolar junction transistor functionality with fast recovery diode characteristics within a single surface-mount housing, targeting efficiency in driver circuits where board space and part count are critical constraints.
No public confirmed substitute part numbers are documented in the provided datasheet.
The internal high-speed switching diode protects the base-emitter junction of the PNP transistor in the reverse direction.
It uses the SOT346 package, also known as SC-59A or TO-236, which is a small Surface-Mounted Device plastic package with three leads.
The maximum collector-emitter voltage (VCEO) with an open base is -40 V.