PMD5001K,115

PMD5001K,115

  • Description:IC MOSFET DRIVER SC-59A
  • Series:-

SKU:d8bc2a559b21 Category: Brand:

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Product Detailed Parameters

  • Description:IC MOSFET DRIVER SC-59A
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP + Base-Emitter Diode
  • Applications:Gate Driver
  • Voltage - Rated:40V
  • Current Rating (Amps):100mA
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3; MPAK

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PMD5001K,115

Overview

The PMD5001K is a PNP transistor and high-speed switching diode integrated in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device plastic package. It functions as a MOSFET driver with an internal diode to protect the base-emitter junction in reverse direction. The PNP transistor features a collector-emitter voltage of -40 V, a collector current of -0.1 A, and a peak collector current of -0.2 A. The integrated diode supports a forward current of 0.2 A with a maximum forward voltage of 1.1 V at 200 mA.

Feature Summary

  • High-speed switching diode protects the base-emitter junction from reverse polarity
  • Application-optimized pinout minimizes layout effort and reduces component count
  • Space-saving solution integrates a general-purpose transistor and diode in one package

Applications

  • Power MOSFET driver

Procurement Notes

Verify the specific ordering suffix matches the required packing method, such as tape and reel quantities. Confirm the device status and revision history against the most recent NXP documentation before design finalization. Ensure compatibility with standard FR4 or ceramic PCB mounting footprints for thermal performance validation.

Selection Notes

Select this component when a compact MOSFET driver solution is required that includes inherent base-emitter protection. The SOT346 package is suitable for space-constrained designs. Evaluate thermal resistance requirements based on the specific PCB material, such as FR4 or Al2O3 ceramic, to ensure power dissipation limits are not exceeded during operation.

Part Context

This device belongs to the category of discrete semiconductor components designed for circuit protection and driving applications. It combines bipolar junction transistor functionality with fast recovery diode characteristics within a single surface-mount housing, targeting efficiency in driver circuits where board space and part count are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What is the primary function of the internal diode?

The internal high-speed switching diode protects the base-emitter junction of the PNP transistor in the reverse direction.

What package type does the PMD5001K use?

It uses the SOT346 package, also known as SC-59A or TO-236, which is a small Surface-Mounted Device plastic package with three leads.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) with an open base is -40 V.

PMD5001K,115PMD5001K,115

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