PMD9002D,115

Overview

The PMD9002D is a NPN Resistor-Equipped Transistor (RET) housed in an SOT457 (SC-74) TSOP6 package. It integrates two NPN transistors and one high-speed switching diode in a totem pole configuration. Key electrical parameters include a collector current of 0.1 A, a collector-emitter voltage of 45 V for TR2, and a peak collector current of 0.2 A. The device features internal bias resistors with a nominal value of 4.7 kΩ.

Feature Summary

• Integrates two transistors and one high-speed switching diode in a single compact package
• Totem pole configuration designed specifically for MOSFET driver applications
• Internal bias resistors minimize external component count and layout complexity

Applications

• MOSFET driver circuits

Procurement Notes

Verify the manufacturer status as the original NXP Standard Product business transitioned to Nexperia. Confirm that the datasheet references align with the current supplier documentation. Ensure the ordering suffix matches the required tape and reel specifications for surface-mount assembly processes.

Selection Notes

Select this component when space-saving solutions are required for driving MOSFETs. The integrated resistor network simplifies circuit design by reducing the number of discrete components needed. Verify that the thermal characteristics on the intended PCB footprint meet the power dissipation requirements for the specific application environment.

Part Context

This device belongs to the category of small signal bipolar transistors equipped with internal resistors. It is designed to replace multiple discrete components, offering a simplified alternative for general-purpose switching and driver applications where board space is limited.

Replacement Considerations

PMD9002D,115