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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.1A 6HUSON
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.1A
- Rds On (Max) @ Id, Vgs：73mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：170pF @ 15V
- Power - Max：510mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
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Overview
The PMDPB56XN,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a 30 V drain-source voltage and a continuous drain current of 4 A per transistor at 25 °C. The on-state resistance is typically 55 mΩ at VGS = 4.5 V and ID = 3.1 A. Total gate charge is 2.9 nC, and the junction temperature range spans from -55 °C to +150 °C.
Feature Summary
- Very fast switching capability enabled by Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package design
- Exposed drain pad providing excellent thermal conduction
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component status aligns with current production requirements. Cross-reference the marking code '1N' with the datasheet to authenticate the device upon receipt. Confirm that the application environment remains within the specified absolute maximum ratings to prevent permanent damage.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications up to 30 V. The exposed drain pad necessitates proper PCB thermal design to manage heat dissipation effectively. Verify that the gate drive voltage meets the minimum threshold for optimal RDSon performance. Consider the total gate charge value when designing high-speed switching circuits to ensure adequate driver capability.
Part Context
This device belongs to the Nexperia/NXP dual Trench MOSFET family designed for space-constrained portable electronics. It shares the SOT1118 footprint with other variants in the series but differs in channel type and voltage ratings. The product utilizes silicon technology optimized for low on-resistance and fast switching speeds in ultra-thin packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must verify pin compatibility and electrical specifications before substituting with similar dual N-channel MOSFETs from other manufacturers.
