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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.8A SOT666
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA, 550mA
- Rds On (Max) @ Id, Vgs：380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-666
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PMDT290UCE is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 package. The N-channel device supports a drain-source voltage of 20 V and continuous current up to 800 mA, with on-state resistance ranging from 290 mΩ to 380 mΩ at 4.5 V gate drive. The P-channel counterpart handles -20 V and -550 mA, featuring resistance between 0.67 Ω and 0.85 Ω. Total power dissipation is rated at 500 mW, with junction temperatures spanning -55 °C to 150 °C.
Feature Summary
- Very fast switching performance enabled by Trench MOSFET technology
- Integrated electrostatic discharge protection up to 2 kV
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Confirm that the component meets all required environmental standards for the intended application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring compact dual-transistor solutions with low on-resistance. Ensure the gate drive voltage aligns with the specified thresholds for optimal conduction. Evaluate thermal management requirements based on the total power dissipation limits and ambient operating conditions.
Part Context
This device belongs to Nexperia's portfolio of ultra-small surface-mounted transistors. It replaces discrete transistor pairs in space-constrained layouts. The SOT666 package provides flat leads for improved coplanarity and thermal behavior compared to traditional leaded packages.
Replacement Considerations
Check pinout compatibility when substituting other dual MOSFETs in the SOT666 footprint. Verify that alternative components meet or exceed the 20 V breakdown voltage and current handling capabilities required by the original circuit design.
FAQ
Is the PMDT290UCE automotive qualified?
No, the product data sheet explicitly states that this specific product is not automotive qualified.
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is ±8 V for both the N-channel and P-channel devices.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases as the junction temperature rises, as indicated by the normalized resistance characteristics in the datasheet.
