PMDXB290UNEZ

$0.33

Description：MOSFET 2N-CH 20V 0.93A 6DFN
Series：-

SKU:db4383a2aa06 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.93A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：930mA (Ta), 3.5A (Tc)
Rds On (Max) @ Id, Vgs：320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：43.6pF @ 10V
Power - Max：280mW (Ta), 6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMDXB290UNEZ

Overview

The PMDXB290UNEZ is a dual N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in a leadless DFN1010B-6 (SOT1216) package. The device features a drain-source voltage rating of 20 V and a continuous drain current of 930 mA at 25 °C. The typical on-state resistance is 270 mΩ at VGS = 4.5 V. It includes ElectroStatic Discharge protection exceeding 2 kV HBM.

Feature Summary

Dual N-channel configuration using Trench MOSFET technology
Low threshold voltage for efficient switching
Very fast switching characteristics
Electrostatic discharge protection greater than 2 kV HBM

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging format, such as reel or cut tape, as indicated in distributor catalogs. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the design accounts for the thermal resistance values provided in the datasheet when mounting on FR4 PCBs to maintain junction temperature within safe operating limits.

Selection Notes

Select this component for applications requiring compact dual N-channel switching with low on-resistance. The DFN1010B-6 package offers a small footprint suitable for space-constrained designs. Consider the 20 V voltage rating and 930 mA current capability when designing power stages. Verify gate drive compatibility with the specified threshold voltage range for optimal performance.

Part Context

This part belongs to Nexperia's portfolio of ultra-small surface-mount devices. The DFN1010B-6 package is designed for high thermal efficiency in a minimal outline. It is distinct from single-channel variants and higher voltage options within the same product family. The marking code 'D' identifies this specific type number on the component body.