PMDXB550UNEZ

$0.46

Description：MOSFET 2N-CH 30V 0.59A 6DFN
Series：-

SKU:90ce1de9dac2 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.59A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：590mA
Rds On (Max) @ Id, Vgs：670mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：30.3pF @ 15V
Power - Max：285mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMDXB550UNEZ

Overview

The PMDXB550UNEZ is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a leadless DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. Key electrical parameters include a drain-source voltage of 30 V, continuous drain current of 590 mA at 4.5 V gate drive, and typical on-state resistance of 550 mΩ. The device offers low threshold voltage, ESD protection exceeding 2 kV HBM, and an exposed drain pad for thermal management.

Feature Summary

Dual N-channel configuration in an ultra-small leadless plastic package
Trench MOSFET technology providing low threshold voltage
Exposed drain pad designed for excellent thermal conduction
ElectroStatic Discharge protection capability greater than 2 kV HBM

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix 'Z' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component matches the exact part number PMDXB550UNEZ for pinout compatibility with the DFN1010B-6 footprint. Confirm that the source provides valid traceability for automotive qualification requirements if applicable to the design.

Selection Notes

Select this component for designs requiring compact dual N-channel switching solutions with high thermal efficiency. The low on-state resistance and small package size make it suitable for space-constrained portable electronics. Evaluate the junction-to-ambient thermal resistance against the expected power dissipation in free air or PCB-mounted configurations to ensure reliable operation within the specified temperature range.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for surface-mount applications. It utilizes advanced Trench technology to achieve performance metrics suitable for modern consumer and industrial electronics. The SOT1216 package variant is optimized for automated assembly processes while maintaining robust electrical characteristics for general-purpose switching tasks.

Replacement Considerations

Consult official Nexperia cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout geometry and package dimensions to fit the existing DFN1010B-6 footprint without board modifications.