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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.86A 6TSSOP
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：860mA
- Rds On (Max) @ Id, Vgs：350mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.72nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：34pF @ 20V
- Power - Max：410mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The PMGD290XN,115 is a dual N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It features a maximum drain-source voltage of 20 V and a continuous drain current of 0.86 A at 25 °C. The device offers a typical on-state resistance of 290 mΩ at VGS = 4.5 V and ID = 0.2 A. Total power dissipation is rated at 0.41 W. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in a compact SOT363 package with a footprint 40% smaller than SOT23
- Fast switching capabilities enabled by TrenchMOS technology
- Low on-state resistance for efficient power handling
- Low threshold voltage suitable for low-level signal applications
Applications
- Driver circuits
- Switching in portable appliances
Procurement Notes
Verify the component status before design finalization. The datasheet indicates this product may be subject to change or discontinuation. Confirm availability through official Nexperia channels or authorized distributors. Ensure the ordering suffix matches the required packaging format. Check for any recent Customer Product/Process Change Notifications regarding manufacturing updates.
Selection Notes
Select this component for space-constrained designs requiring dual N-channel MOSFETs. The SOT363 package provides significant board area reduction compared to standard SOT23 packages. Consider the thermal characteristics and power dissipation limits when designing for high-current applications. Verify gate drive voltage requirements against the low threshold voltage specifications.
Part Context
This device belongs to the μTrenchMOS series from Nexperia (formerly Philips Semiconductors). It is designed as an extremely low level FET for portable electronics. The dual configuration allows for complementary switching functions within a minimal surface-mount footprint, supporting density requirements in consumer and computing markets.
Replacement Considerations
Consult the official Nexperia replacement guide for verified substitutes. Generic equivalents may not match the specific TrenchMOS performance characteristics or pinout configuration. Ensure any alternative part meets the same voltage, current, and thermal ratings.
