PML260SN,118

$0.54

Description：MOSFET N-CH 200V 8.8A DFN3333-8
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ee607727c97c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PML260SN,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 200V 8.8A DFN3333-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PML260SN,118

Description：MOSFET N-CH 200V 8.8A DFN3333-8
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：294mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：13.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：657 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN3333-8
Package / Case：8-VDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for PML260SN,118

PML260SN,118

Single FETs, MOSFETs Overview

The PML260SN is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an HVSON8 plastic package. It features a drain-source voltage of 200 V and a continuous drain current of 8.8 A at 25 °C. The device exhibits a maximum on-state resistance of 294 mΩ at VGS = 10 V and 25 °C. Total gate charge is typically 13.3 nC, with a gate-drain charge of 4.2 nC. Thermal resistance from junction to mounting base is 2.5 K/W.

Single FETs, MOSFETs Feature Summary

Standard level threshold for compatibility with common gate drive sources
Low on-state resistance to minimize conduction losses
Very low thermal impedance for efficient heat dissipation
Small footprint and low profile suitable for compact designs

Single FETs, MOSFETs Applications

Primary side switching
DC-to-DC converters
Portable appliances

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component status aligns with current design requirements, as product availability may change. Ensure the selected part meets all absolute maximum ratings for the intended operating environment before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring standard logic-level gate drive compatibility. Evaluate thermal management needs based on the specified junction-to-mounting base thermal resistance. Consider the peak drain current capabilities when designing for pulsed load conditions within the safe operating area limits.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to Nexperia's TrenchMOS family, designed for power switching applications. The HVSON8 package provides enhanced thermal performance compared to standard small outline packages. It serves as a discrete semiconductor solution for managing power flow in portable and industrial electronic systems.