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PMN25ENEAX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 6.4A 6TSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMN25ENEAX
- Description：MOSFET N-CH 30V 6.4A 6TSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：440 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：667mW (Ta), 7.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SC-74, SOT-457
Single FETs, MOSFETs datasheet and documents for PMN25ENEAX
Single FETs, MOSFETs Overview
The PMN25ENEAX is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology to achieve fast switching performance within a small SOT457 (SC-74) surface-mount plastic package. The device is designed for high-efficiency applications, offering low conduction and switching losses. It features an extended operating temperature range up to 175°C junction temperature and includes Electrostatic Discharge protection exceeding 2 kV HBM. The component is qualified according to AEC-Q101 standards for automotive reliability.
Single FETs, MOSFETs Feature Summary
- Fast switching capability enabled by Trench MOSFET technology
- Extended temperature range supporting operation up to 175°C junction temperature
- AEC-Q101 qualified for automotive application reliability
- High ESD protection rating exceeding 2 kV Human Body Model
Single FETs, MOSFETs Applications
- Relay driver circuits
- High-speed line drivers
- High-side load switch implementations
- General switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'EAX' against the official Nexperia datasheet to confirm packaging details and tape-and-reel specifications. Ensure design compatibility with the SOT457 footprint. Confirm that the AEC-Q101 qualification meets project requirements. Check current lifecycle status as products may transition to recommended new designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with logic-level drive compatibility and robust thermal performance. The SC-74 package suits space-constrained PCB layouts. Verify gate-source voltage limits and continuous drain current ratings against the specific circuit load requirements before integration.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia PMN series of P-channel Trench MOSFETs. These devices are engineered for power management and signal switching tasks where small form factors and high reliability are critical. The series supports various industrial and automotive environments through standardized packaging and rigorous qualification processes.
Single FETs, MOSFETs Replacement Considerations
Consult the official Nexperia replacement guide for verified cross-reference part numbers. Do not substitute based on generic pinout assumptions; verify electrical parameters and package dimensions against the target specification.
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