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The PMP4501V,115 is a dual NPN matched transistor in an SOT666 package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA per transistor. The DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA. Current gain matching (hFE1/hFE2) is specified between 0.95 and 1. Base-emitter voltage matching (VBE1-VBE2) is limited to 2 mV. Total power dissipation is 300 mW for the device. Transition frequency (fT) reaches 250 MHz.
Verify the component status before design finalization. The PMP4501V,115 is designated as NRND (Not Recommended for New Designs). Confirm availability through official Nexperia channels or authorized distributors. Ensure the ordering suffix matches the required reel or cut tape packaging specifications for production integration.
Select this component when matched NPN characteristics are critical for circuit symmetry. The SOT666 package provides internal isolation suitable for compact designs. Verify that the 45 V voltage rating and 100 mA current limits meet the application requirements. Consider thermal resistance values for heat dissipation planning on FR4 PCBs.
This part belongs to Nexperia's matched double transistor family. The PNP/PNP complement is the PMP5501V. The NPN/NPN hFE1/hFE2 0.98 complement is the PMP4201V. These components share similar performance profiles but differ in polarity and specific matching ratios defined in their respective datasheets.
The PMP4201V serves as the NPN/NPN complement with a 0.98 hFE matching ratio. The PMP5501V is the PNP/PNP equivalent. Verify pin compatibility and electrical parameters against the original design requirements before substitution.
The base-emitter voltage matching (VBE1-VBE2) is specified as a maximum of 2 mV under conditions of VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Yes, the transistors in the SOT666 package are fully isolated internally.
Reflow soldering is the only recommended soldering method for this component.