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The PMP5501G,115 is a dual PNP bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It features matched transistors in a 5-TSSOP (SC-353/SOT-353) surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 45 V, a maximum DC collector current (IC) of 100 mA, and a power dissipation (Pd) of 300 mW. The device exhibits a transition frequency (fT) of 175 MHz and a minimum DC current gain (hFE) of 200 at 2 mA and 5 V. Operating temperatures range from -65°C to +150°C.
Verify the specific suffix '115' against the official Nexperia datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and lead-free terminal finish details prior to integration. Ensure design-in approval aligns with the manufacturer's recommended usage guidelines for this component type.
Select this component when a matched dual PNP pair is required for precise biasing or switching tasks. The 5-TSSOP package suits space-constrained PCB layouts. Consider the 45V voltage rating and 100mA current limit for load requirements. Verify thermal management capabilities given the 300mW power dissipation constraint in the selected package.
This part belongs to Nexperia's discrete semiconductor portfolio, specifically within the Bipolar Junction Transistor (BJT) arrays category. It is designed as a compact solution for dual-transistor functions, replacing two individual components with a single matched pair to improve circuit consistency and reduce board space.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Nexperia's official replacement guide or equivalent parameter-matched alternatives from other manufacturers if this specific part number becomes unavailable.