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The PMP5501V,115 is a PNP/PNP matched double transistor manufactured by Nexperia. It is housed in an ultra-small SOT666 plastic surface-mounted package with fully isolated internal transistors. The device features a collector-emitter voltage (VCEO) of -45 V and a continuous collector current (IC) of -100 mA per transistor. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 450 at VCE = -5 V and IC = -2 mA. The component exhibits high matching characteristics, with a DC current gain ratio (hFE1/hFE2) between 0.95 and 1, and a base-emitter voltage difference (VBE1−VBE2) of maximum 2 mV under specified conditions.
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Select this component when matched PNP transistor pairs are required in a compact form factor. The SOT666 package provides isolation between the two transistors, which is critical for minimizing crosstalk in sensitive analog applications. Ensure the design accounts for the non-automotive qualification status if used in standard commercial electronics.
This part belongs to Nexperia's family of matched double transistors designed for space-constrained designs. It serves as the PNP/PNP complement to the NPN/NPN PMP4501V and shares the SOT666 package platform with other matched pairs like the PMP5201V. The series is engineered to provide consistent electrical characteristics between paired devices.
The official PNP/PNP complement listed in the datasheet is the PMP5201V. Designers should verify pin compatibility and thermal characteristics before substituting with other SOT666 matched transistors.
No, the transistors in the SOT666 package are fully isolated internally.
The base-emitter voltage matching (VBE1−VBE2) has a maximum value of 2 mV when VCE = -5 V, IC = -2 mA, and Tamb = 25 °C.
No, the product data sheet explicitly states that this is a non-automotive qualified product unless otherwise expressly stated.