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The PMP5501Y-QF is a dual PNP bipolar junction transistor (BJT) manufactured by Nexperia. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current of 100 mA. The device utilizes silicon technology and is housed in an SOT363-3 surface-mount package. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a power dissipation (Pd) of 300 mW. The gain-bandwidth product (fT) is 175 MHz, with a DC current gain (hFE) ranging from 200 to 200 at 2 mA and 5 V. Operating temperatures span from -65 °C to +150 °C.
Verify the specific suffix 'QF' against official Nexperia documentation to confirm package type and automotive grade status. Ensure compatibility with existing PCB footprints for the SOT363-3 package. Confirm RoHS compliance and lead-free specifications during sourcing. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component for designs requiring matched PNP pairs in small form factors. Consider the 45 V voltage rating and 100 mA current limit for load requirements. Evaluate thermal management needs given the 300 mW power dissipation in the SOT363-3 package. Verify that the -65 °C to +150 °C operating range meets environmental conditions.
This part belongs to Nexperia's PMxx series of matched double transistors. It serves as the PNP/PNP complement to the NPN/NPN PMP4501Y variant. The series is designed for applications needing matched characteristics in ultra-small surface-mounted packages.
Publicly confirmed substitute part numbers are not available in the provided data. Check Nexperia documentation for direct replacements or functional equivalents within the PMxx series.