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The PMP5501Y,135 is a PNP/PNP matched double transistor manufactured by Nexperia. It is housed in a TSSOP6 (SOT363-3) surface-mounted plastic package with six leads. The device features a collector-emitter voltage (VCEO) of -45 V and a maximum DC collector current (IC) of -100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at IC = -2 mA and VCE = -5 V. The transition frequency (fT) is typically 175 MHz. Total power dissipation is rated at 300 mW for the device and 200 mW per transistor at Tamb ≤ 25 °C. The component is qualified under AEC-Q101 standards.
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Select this component when matched PNP transistor pairs are required for precision analog applications. The SOT363-3 package offers a compact footprint suitable for space-constrained designs. Ensure thermal management accounts for the 300 mW total power dissipation limit. Verify that the -45 V voltage rating meets the circuit requirements.
The PMP5501Y is part of Nexperia's portfolio of matched double transistors. It serves as the PNP/PNP complement to the NPN/NPN PMP4501Y. The PMP5201Y is identified as the hFE-matched complement within the same family. These devices are designed for applications requiring high symmetry between paired transistors.
Public confirmed substitutes include the PMP5201Y (PNP/PNP complement) and PMP4501Y (NPN/NPN complement). Verify pin compatibility and electrical specifications before substitution.
The DC current gain matching (hFE1/hFE2) has a minimum value of 0.95 and a typical value of 1.
The base-emitter voltage matching (VBE1−VBE2) has a maximum limit of 2 mV under specified conditions.
Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.