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PMPB08R4VPX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 12V 12A DFN2020M-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMPB08R4VPX
- Description：MOSFET P-CH 12V 12A DFN2020M-6
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：9.6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for PMPB08R4VPX
Single FETs, MOSFETs Overview
The PMPB08R4VP is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020M-6 (SOT1220-2) plastic package with dimensions of 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal management. Key electrical parameters include a drain-source voltage of -12 V, a gate-source voltage range of -8 V to 8 V, and a continuous drain current of -12 A at 25 °C. The typical on-state resistance is 8.4 mΩ at VGS = -4.5 V and ID = -12 A.
Single FETs, MOSFETs Feature Summary
- Low threshold voltage for efficient switching
- Trench MOSFET technology for enhanced performance
- Ultra-thin leadless SMD package design
- Exposed drain pad for superior thermal conduction
Single FETs, MOSFETs Applications
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Computing power management
Single FETs, MOSFETs Procurement Notes
Verify the specific part number PMPB08R4VP against official Nexperia documentation to ensure compatibility with your circuit requirements. Confirm that the DFN2020M-6 package footprint matches your PCB layout specifications. Check the latest datasheet revision for any updates to thermal or electrical characteristics before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low on-resistance. The DFN2020M-6 package is suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified VGS limits. Consider the thermal resistance values when designing heat dissipation strategies for high-current operations.
Single FETs, MOSFETs Part Context
This component belongs to Nexperia's portfolio of Trench MOSFETs, which are designed for medium power applications. The DFN2020M-6 package is part of a series of leadless surface-mount devices aimed at improving thermal performance and reducing board space. These transistors are engineered for efficiency in portable electronics and power management systems.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Ensure any replacement maintains the same voltage, current, and thermal ratings. Verify package compatibility if direct pin-for-pin replacement is required.
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