PMPB14R7EPX

Single FETs, MOSFETs Overview

The Nexperia PMPB14R7EP is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020M-6 (SOT1220-2) plastic package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal management and logic-level compatibility. Key electrical parameters include a drain-source voltage of -30 V, a continuous drain current of -8 A at 25 °C, and a typical on-state resistance of 14.5 mΩ at VGS = -10 V.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible gate drive
• Very fast switching performance
• Small and leadless ultra-thin SMD plastic package
• Exposed drain pad for excellent thermal conduction

Single FETs, MOSFETs Applications

• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Computing power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package variant and marking code alignment. Confirm that the application environment remains within the specified junction temperature limits and absolute maximum ratings defined in the product data sheet to maintain device reliability and operational integrity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring compact form factors with efficient heat dissipation capabilities. The logic-level compatibility simplifies gate drive circuitry requirements. Ensure the PCB layout accommodates the exposed drain pad to maximize thermal performance and utilize the low on-state resistance for minimizing conduction losses in power management applications.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of P-channel Trench MOSFETs designed for surface-mount applications. The DFN2020M-6 package provides a balance between current handling capacity and board space efficiency. It is intended for general-purpose power switching and load control tasks where small footprint and thermal performance are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations, package dimensions, and electrical characteristics such as RDS(on) and VGS(th) to ensure functional equivalence without modifying existing PCB layouts or driver circuits.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

Does the device include an integrated body diode?

Yes, the datasheet specifies source-drain diode characteristics, including forward voltage and reverse recovery behavior.