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PMV28UN,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 20V 3.3A TO236AB. Review the specifications below when checking this part for your BOM.
The PMV28UN,215 is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology in a SOT23 (TO-236AB) surface-mounted package. It features a drain-source voltage of 20 V and a continuous drain current of 3.3 A at 25 °C. The device exhibits a low gate-source threshold voltage with a maximum of 1 V at 270 µA. On-state resistance is specified as 32 mΩ maximum at VGS = 4.5 V and ID = 3.3 A. Total gate charge reaches 9 nC maximum at VGS = 4.5 V. Input capacitance is 470 pF maximum at VDS = 10 V.
Verify the component status carefully before procurement. Official documentation indicates this specific part number has reached end-of-life and is no longer manufactured by the original entity. Confirm availability through authorized distributors or Nexperia, which acquired the standard product business. Ensure the ordering suffix matches required packaging specifications.
Select this component for applications requiring compact N-channel switching in space-constrained designs. The SOT23 package suits surface-mount assembly processes. Evaluate thermal performance against the junction-to-ambient resistance limits when designing PCB layouts. Verify that the 20 V rating aligns with system voltage requirements to prevent overstress conditions during operation.
This device belongs to the PMV2 series of N-channel Trench MOSFETs from NXP Semiconductors. The series focuses on providing robust switching solutions in small plastic packages. The PMV28UN specifically targets general-purpose switching needs where low on-resistance and fast response are critical for system efficiency.
BSR802NL6327HTSA1 by Infineon Technologies is identified as a substitute option.
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