PMV48XPA2R

$0.31

Description：MOSFET P-CH 20V 4A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:839e24460921 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PMV48XPA2R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 20V 4A TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMV48XPA2R

Description：MOSFET P-CH 20V 4A TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：49mOhm @ 4A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：679 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：610mW (Ta), 8.3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for PMV48XPA2R

PMV48XPA2R

Single FETs, MOSFETs Overview

The PMV48XPA2R is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT23 surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -4 A at 25 °C. The device exhibits a maximum on-state resistance of 55 mΩ at VGS = -4.5 V and ID = -4 A, with a gate-source threshold voltage ranging from -0.6 V to -1.3 V. It supports an extended junction temperature range up to 175 °C and is qualified under the AEC-Q101 automotive standard.

Single FETs, MOSFETs Feature Summary

Trench MOSFET technology for very fast switching performance
Extended operating temperature range up to 175 °C junction temperature
Low threshold voltage for efficient drive capability
Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

Relay driver
High-speed line driver
High-side load switch
Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'R' against official Nexperia documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the ordering code matches the required automotive qualification level. Confirm that the SOT23 footprint aligns with the provided soldering guidelines for reflow processes. Cross-reference the marking code '%HG' with manufacturing site codes during incoming inspection.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution is required for high-side switching applications. The low on-state resistance minimizes conduction losses in power paths. The AEC-Q101 qualification makes it suitable for automotive environments requiring robust thermal performance. Consider the -20 V rating for low-voltage DC-DC conversion or battery protection circuits where space constraints necessitate the SOT23 package.

Single FETs, MOSFETs Part Context

This device belongs to the PMV48XP series of P-channel Trench MOSFETs manufactured by Nexperia. The series utilizes advanced trench gate technology to achieve low RDS(on) within small plastic packages. The PMV48XPA2 variant specifically targets automotive and industrial applications requiring reliable switching performance in a minimal footprint.