PN3563 TIN/LEAD

Overview

The PN3563 is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and supports a collector-emitter voltage of 30 V and a collector-base voltage of 40 V. The device handles a continuous collector current of 600 mA with a power dissipation rating of 625 mW. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 V and 2 mA, extending to a maximum of 600 at 10 V and 10 mA. Operating temperatures range from -65°C to +150°C.

Feature Summary

• NPN silicon construction for standard switching and amplification
• Through-hole TO-92-3 mounting configuration
• High DC current gain capability up to 600

Applications

• General-purpose signal amplification circuits
• Low-power switching applications
• Audio pre-amplifier stages

Procurement Notes

Verify the specific suffix designation when ordering. The TIN/LEAD variant indicates lead composition compliance requirements distinct from Pb-free versions. Confirm RoHS status and packaging format directly with the manufacturer or authorized distributors prior to procurement to ensure alignment with project specifications.

Selection Notes

Select this component for designs requiring moderate voltage handling and high current gain in a compact through-hole form factor. Ensure thermal management accommodates the 625 mW dissipation limit. Verify that the required hFE range aligns with the specified test conditions for the target application circuit design.

Part Context

This part belongs to the PN3566 series family produced by Central Semiconductor. While sharing similar physical dimensions and basic electrical profiles, specific voltage ratings and gain distributions may vary between exact model numbers within the series. Cross-reference datasheets for precise parameter matching against alternative components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate generic NPN TO-92 transistors with comparable VCEO, IC, and hFE specifications only after verifying pinout compatibility and thermal performance limits.