PN3563 TRE TIN/LEAD

$0.15

Description：12V 50MA 625MW TH TRANSISTOR-SMA
Series：-

SKU:e12bebc40b71 Category: Bipolar RF Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：12V 50MA 625MW TH TRANSISTOR-SMA
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：-
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 8mA, 10V
Current - Collector (Ic) (Max)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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PN3563 TRE TIN/LEAD

Overview

The PN3563 is an NPN silicon epitaxial planar transistor manufactured by Central Semiconductor Corp. It is housed in a TO-92-3 through-hole package and rated for a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 80 V. The device supports a continuous collector current of 500 mA with a maximum power dissipation of 625 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 10 V and 2 mA, and a transition frequency (fT) of 600 MHz. The component operates within a temperature range of -65°C to +150°C.

Feature Summary

High-frequency performance suitable for RF amplification applications
Robust thermal stability across extended industrial temperature ranges
Standardized TO-92-3 leaded package for reliable through-hole mounting

Applications

General-purpose high-frequency amplification circuits
Switching applications requiring moderate current handling
Audio pre-amplifier stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating composition and packaging format. Confirm RoHS compliance status and lead-free availability requirements prior to procurement. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.

Selection Notes

Select this component when a standard NPN BJT with 60 V collector-emitter voltage and 500 mA continuous current capability is required. The 600 MHz transition frequency makes it appropriate for high-speed switching or RF signal processing tasks where moderate power dissipation is acceptable within a TO-92-3 footprint.

Part Context

The PN3563 belongs to Central Semiconductor's general-purpose bipolar junction transistor lineup. It serves as a standard discrete semiconductor solution for circuit designs requiring reliable NPN switching or amplification. The device is commonly utilized in consumer electronics, industrial control systems, and communication equipment where proven silicon planar technology is preferred.