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PN3568 PBFREE is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 60V 500MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.
The PN3568 PBFREE is an NPN silicon epitaxial planar bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It is designed for general-purpose applications and features a maximum collector-emitter voltage (Vceo) of 60 V, a maximum collector-base voltage (Vcbo) of 80 V, and an emitter-base voltage (Vebo) of 5 V. The device supports a maximum DC collector current of 500 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a saturation voltage of 250 mV and a gain-bandwidth product (Ft) of 600 MHz. The component is housed in a TO-92 through-hole package.
Verify the specific ordering suffix when purchasing. The manufacturer requires adding the "PBFREE" suffix to the base part number to ensure the device is lead-free plated. Confirm that the received component matches the exact PN3568 PBFREE designation to guarantee compliance with environmental specifications and correct terminal plating requirements.
Select this component for designs requiring a standard NPN transistor with moderate current handling and high-speed switching capabilities. The 600 MHz transition frequency makes it suitable for RF and audio applications where low noise is beneficial. Ensure the circuit design accommodates the 625 mW thermal dissipation limit within the TO-92 package constraints.
This component belongs to the CBCX68 series of NPN transistors from Central Semiconductor. The series includes variants such as the PN3565, which is also designed for low-noise applications. The PN3568 serves as a general-purpose alternative within this lineup, offering a balance of voltage ratings and speed for various electronic implementations.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against potential alternatives before substitution.
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