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Product Detailed Parameters
- Description：5V 10V 10MA 625MW TH JFET N CHAN
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
- Resistance - RDS(On)：30 Ohms
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The PN4091 PBFREE is a single N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Central Semiconductor. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of 40 V, and a maximum power dissipation of 625 mW. The device features a gate-source cutoff voltage of 10 V, a zero-gate-voltage drain current of 30 mA, and an on-resistance of 30 Ohms.
Feature Summary
- N-channel depletion mode operation for signal processing
- Silicon construction with high thermal stability up to 150°C
- Through-hole mounting in a compact TO-92-3 form factor
Applications
- Low-noise amplifier stages
- Analog switching circuits
- Constant current source implementations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure compliance with RoHS directives and lead-free requirements. Confirm that the TO-92-3 package style matches the target PCB footprint. Cross-reference the part number with official distributor catalogs to validate current availability status and manufacturing origin before finalizing procurement orders.
Selection Notes
Select this component when a low on-resistance of 30 Ohms and higher drain current of 30 mA are required compared to other variants in the series. Ensure the circuit design accommodates the 40 V breakdown limits for both drain-source and gate-source terminals. Verify that the through-hole mounting method aligns with the assembly process and that the 625 mW power dissipation rating provides sufficient margin for the intended thermal environment.
Part Context
This device belongs to the PN4091 series of small-signal JFETs produced by Central Semiconductor. It is designed for general-purpose analog applications requiring reliable field-effect transistor performance. The product line emphasizes discrete semiconductor solutions with options for various packaging styles to suit different manufacturing needs.
Replacement Considerations
PN4091 LEADFREE and PN4091 TRA are listed as related variants within the same family. Verify pinout compatibility and exact electrical parameter tolerances before substituting.
