SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PN4303 is an N-Channel General Purpose Amplifier JFET designed for low-level audio and general-purpose applications with high impedance signal sources. It features a Drain-Gate Voltage of 30 V, Gate-Source Voltage of -30 V, and Gate-Source Breakdown Voltage of -30 V at -1.0 µA. The device operates within a junction temperature range of -55 to 150 °C, with a total device dissipation of 625 mW. Zero-Gate Voltage Drain Current ranges from 4.0 to 10 mA at -15 V, while Gate Reverse Current is limited to -1.0 nA.
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific unit received matches the Rev. A datasheet specifications provided in the local source material. Ensure the TO-92 package dimensions and pinout (Drain, Source, Gate) align with your PCB layout requirements before finalizing procurement.
Select this component when designing circuits requiring an N-Channel JFET for high impedance input stages or low-level audio amplification. Consider the -30 V breakdown voltage and 625 mW power dissipation limits during thermal design. Verify compatibility with high impedance signal sources to ensure optimal performance in the intended application environment.
The PN4303 is an N-Channel JFET originally manufactured by Fairchild Semiconductor, now part of onsemi. It belongs to the family of general-purpose amplifier devices intended for low-level audio and signal processing tasks. The component utilizes a TO-92 package and is characterized by its high input impedance capabilities suitable for interfacing with sensitive signal sources.
Public confirmed substitute part numbers are not available in the provided documentation.
The maximum Drain-Gate Voltage (VDG) rating is 30 V.
The operating and storage junction temperature range is -55 to 150 °C.
The Zero-Gate Voltage Drain Current (IDSS) ranges from 4.0 to 10 mA when VDS is -15 V and VGS is 0.