PN4391_D26Z

PN4391_D26Z

$0.06
  • Description:JFET N-CH 30V TO92-3
  • Series:-

SKU:fbc5447f8007 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 30V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):50 mA @ 20 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:4 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:14pF @ 20V
  • Resistance - RDS(On):30 Ohms
  • Power - Max:625 mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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PN4391_D26Z

Overview

The PN4391_D26Z is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92-3 through-hole package, measuring 4.58mm in length and 4.57mm in width. The device supports a maximum drain-source voltage of 30V and operates within a temperature range of -55°C to 150°C. Key electrical specifications include a continuous drain current ranging from 50mA to 150mA and a maximum power dissipation of 625mW at an ambient temperature of 25°C. The component features a maximum drain-source resistance of 30Ω.

Feature Summary

  • N-channel JFET configuration for signal processing applications
  • Through-hole TO-92-3 packaging for standard board mounting
  • Wide operating temperature range suitable for industrial environments

Applications

  • Low-noise amplifier circuits
  • High-impedance input stages
  • Constant current source implementations

Procurement Notes

Verify the exact suffix designation against official onsemi documentation, as distribution listings may vary. Confirm that the specific variant matches the required TO-92-3 package and 30V rating. Ensure compliance with RoHS standards if applicable to your manufacturing process. Cross-reference the manufacturer part number to avoid confusion with similar JFET models. Validate supply chain authenticity through authorized channels.

Selection Notes

Select this component when a low-noise N-channel JFET with moderate voltage handling is required. The TO-92-3 package is ideal for prototyping or low-volume production where through-hole mounting is preferred. Consider the 30V breakdown limit and 625mW power dissipation for thermal management. Evaluate noise performance requirements against other JFET options in the portfolio.

Part Context

This JFET belongs to onsemi's discrete semiconductor transistor lineup, specifically designed for analog signal applications. It complements the company's broader portfolio of MOSFETs and bipolar transistors. The TO-92-3 form factor is a legacy package style still widely used in consumer electronics and industrial control systems requiring reliable, low-cost active components.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

PN4391_D26ZPN4391_D26Z
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