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The PN918 APM TIN/LEAD is a silicon NPN general-purpose switching bipolar junction transistor manufactured by Central Semiconductor. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum DC collector current of 50 mA, a collector-emitter voltage (VCEO) of 15 V, and a collector-base voltage (VCBO) of 30 V. The device features an emitter-base voltage (VEBO) of 3 V, a collector-emitter saturation voltage of 400 mV, and a power dissipation rating of 625 mW. Its gain-bandwidth product (fT) reaches 600 MHz, with a minimum DC forward current transfer ratio (hFE) of 20.
Verify the specific ordering suffix 'APM TIN/LEAD' against the manufacturer's official documentation to confirm lead-free status and plating composition. Ensure the requested component matches the exact PN918 series designation to avoid discrepancies in electrical characteristics or packaging type during acquisition.
Select this component when a low-voltage NPN transistor with moderate current handling and high-speed switching capabilities is required. The TO-92-3 package facilitates easy integration into through-hole designs. Verify that the 15 V collector-emitter voltage and 50 mA current limits align with the target circuit requirements before implementation.
This part belongs to the PN918 series of small-signal transistors produced by Central Semiconductor Corp. These devices are engineered for reliable performance in consumer electronics and industrial control systems where compact form factors and robust thermal stability are necessary for continuous operation.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides for compatible alternatives if direct replacement is required.
The maximum operating temperature for the PN918 is +150°C.
Yes, the PN918 is designed for through-hole installation using a TO-92-3 package.
The gain-bandwidth product (fT) of the PN918 is 600 MHz.