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The PN918 TIN/LEAD is a silicon NPN general-purpose switching bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and supports a maximum collector-emitter voltage of 15 V and a collector-base voltage of 30 V. The device handles a continuous collector current of 50 mA with a power dissipation rating of 625 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 20, a transition frequency (fT) of 600 MHz, and an emitter-base breakdown voltage of 3 V. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix required for tin/lead plating when placing orders. Confirm RoHS compliance status details directly with the manufacturer or authorized distributors. Ensure the procurement documentation matches the exact part number to avoid receiving lead-free variants if tin/lead is strictly required for the application.
Select this component for low-voltage switching tasks requiring moderate speed. The 15 V collector-emitter rating limits suitability for high-voltage environments. Compare the 50 mA current limit against load requirements. The TO-92-3 package dictates through-hole mounting constraints during PCB layout design.
This part belongs to the PN918 series of NPN transistors produced by Central Semiconductor. It serves as a discrete semiconductor solution within the broader category of bipolar junction transistors. The product line focuses on providing reliable silicon-based components for various electronic assembly needs.
Publicly confirmed substitute part numbers are not available in the provided source material.