PRF957,115

Overview

The PRF957,115 is a silicon NPN UHF wideband transistor manufactured by NXP USA Inc. It is housed in a surface-mount SOT323 package and designed for GHz-range RF front-end applications. Key electrical parameters include a transition frequency (fT) of 8.5 GHz at IC = 30 mA and VCE = 6 V. The device provides a maximum unilateral power gain (GUM) of 15 dB at 1 GHz under the same bias conditions. At 1 GHz with IC = 5 mA, the noise figure is typically 1.3 dB. The total power dissipation is rated at 270 mW when the soldering point temperature is maintained at 60 °C.

Feature Summary

• Gold metallization ensures excellent reliability
• Small size suitable for compact designs
• Low noise performance optimized for sensitive receivers
• Low distortion characteristics for signal integrity

Applications

• Communication systems
• Instrumentation systems
• RF front ends for analog and digital cellular telephones
• Radar detectors
• Satellite TV-tuners

Procurement Notes

Verify the component authenticity against the official NXP datasheet specifications. Confirm that the SOT323 package dimensions and pinout match the required design constraints. Ensure the supplier provides traceability documentation consistent with NXP manufacturing standards to guarantee device reliability in high-frequency operations.

Selection Notes

Select this transistor for applications requiring high gain and low noise in the UHF and GHz ranges. Consider the thermal resistance from junction to soldering point when designing heat dissipation strategies. Verify that the operating collector current and voltage remain within the specified limiting values to prevent permanent damage.

Part Context

The PRF957 is part of NXP's discrete semiconductor portfolio, originally developed by Philips Semiconductors. It serves as a specialized component for high-frequency analog and digital circuits. The device is engineered to meet the demands of modern communication technologies where small form factors and high performance are critical.

Replacement Considerations

Consult the official NXP documentation for verified substitute part numbers. Cross-reference electrical parameters such as fT, gain, and noise figure to ensure compatibility. Verify package compatibility before implementing any alternative components in existing designs.

FAQ

What is the typical noise figure of the PRF957 at 1 GHz?

The typical noise figure is 1.3 dB when measured at IC = 5 mA, VCE = 6 V, and f = 1 GHz.

What is the maximum unilateral power gain at 1 GHz?

The maximum unilateral power gain (GUM) is typically 15 dB at IC = 30 mA, VCE = 6 V, and Tamb = 25 °C.

What package type does the PRF957 use?

The PRF957 uses a plastic surface-mounted SOT323 package with three leads.