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The PRFMB200W12 is a single IGBT module manufactured by KYOCERA AVX, designed for high-power switching applications. It features a silicon technology construction with a maximum collector-emitter voltage (VCEO) of 1200 VDC and a continuous collector current rating of 200 A at 25°C. The device integrates a Fast Recovery Diode (FRD) within a 1-in-1 chopper circuit configuration. Key electrical parameters include a collector-emitter saturation voltage of 1.45 V and a gate-emitter leakage current of 1 µA. The module supports a maximum operating temperature of +150°C and utilizes screw mount installation.
This component is officially listed as End-of-Life (EOL). Verification of final availability through authorized distributors is required before procurement planning. Due to the discontinued status, lead times are indefinite, and direct replacement sourcing is necessary for ongoing production needs.
Select this module for applications requiring a combined IGBT and FRD solution in a compact chassis-mount form factor. Ensure the design accommodates the 94 mm x 35 mm x 30 mm package dimensions and screw mounting requirements. Verify that the system can handle the specified 1.45 V saturation voltage drop and thermal dissipation limits at the intended operating temperatures.
The PRFMB200W12 belongs to the KYOCERA AVX IGBT Modules product line, specifically engineered for high-power industrial electronics. It represents a discrete power semiconductor solution combining switching and freewheeling capabilities. This series targets demanding environments where reliability and high voltage isolation are critical for system performance.