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The PS2513L-1-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a DIP-4 Gull Wing package. The device provides high isolation voltage of 5000 Vrms and supports a maximum collector-emitter voltage of 120 V. Key electrical parameters include a forward current of 80 mA, forward voltage of 1.3 V, and a current transfer ratio ranging from 100% to 400%. It operates with switching speeds of 20 µs for both rise and fall times, handles a maximum collector current of 30 mA, and dissipates up to 150 mW. The component functions reliably within a temperature range of -55°C to +100°C.
Verify the specific suffix 'A' against the official Renesas datasheet to confirm pinout and electrical tolerances match design requirements. Confirm RoHS compliance status through the manufacturer's documentation. Check the lifecycle status as NRND (Not Recommended for New Designs) to assess long-term availability risks before finalizing procurement plans.
Select this component when a high collector-emitter voltage of 120 V is required alongside standard transistor output characteristics. Ensure the application benefits from the 5000 Vrms isolation barrier. Verify that the 20 µs switching speed meets the system timing constraints. Consider the DIP-4 package compatibility with existing PCB footprints during the selection process.
This part belongs to the PS2503L/PS2513L series of high-speed switching photocouplers. These devices are designed for applications needing fast response times and high isolation reliability. The series typically includes variants with different packaging options and electrical ratings, such as the PS2503L-1-A which features lower voltage ratings compared to the PS2513L-1-A.
Public confirmed substitute part numbers: None identified in available documentation.