PS2561-1-D-A

Overview

The PS2561-1-D-A is a single-channel transistor output optocoupler manufactured by CEL. It integrates a Gallium Arsenide (GaAs) infrared emitting diode with an NPN silicon phototransistor within a surface-mount package. The device provides high isolation voltage of 5000 Vrms between input and output circuits. Key electrical parameters include a minimum collector-emitter breakdown voltage of 80 V, a maximum forward current of 30 mA, and a nominal current transfer ratio ranging from 100% to 300% at 5 mA input. The typical rise and fall times are specified at 3 microseconds.

Feature Summary

• Integrates GaAs LED and NPN phototransistor for signal isolation
• Provides high dielectric isolation voltage between input and output
• Features fast switching speed with typical microsecond response times
• Designed for surface mount assembly in compact applications

Applications

• Industrial control system signal isolation
• Solid-state relay driver circuits
• Microprocessor interface isolation
• Pulse width modulation signal transmission

Procurement Notes

Verify the specific suffix D-A against manufacturer documentation to confirm pinout configuration and lead material specifications. Ensure compatibility with RoHS directives if required by the target application environment. Cross-reference the exact part number with official distributor catalogs to confirm availability status and manufacturing origin details prior to procurement.

Selection Notes

Select this component when high isolation voltage and moderate switching speed are required for digital signal transmission. Consider the current transfer ratio range to ensure adequate output drive capability for the load circuit. Evaluate the surface mount package constraints against the printed circuit board layout requirements. Verify thermal operating limits against the expected ambient temperature conditions of the final assembly.

Part Context

This component belongs to the NEPOC series of photocouplers produced by CEL. The series utilizes standard optoelectronic isolation technology combining infrared emission with silicon detection. The specific model variant indicates a particular packaging and performance tier within the broader product line designed for general-purpose isolation tasks.

Replacement Considerations

Direct substitutes may include other single-channel transistor output optocouplers with comparable 5000 Vrms isolation ratings. Verify that replacement parts match the pin configuration and current transfer ratio specifications to maintain circuit functionality without redesign.