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The PS2561-1-V-W-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a four-pin DIP package. The device provides high isolation voltage of 5000 Vrms, ensuring reliable signal transmission between isolated circuits. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum forward current of 40 mA, and a typical current transfer ratio range. It operates within a temperature range of -55°C to +100°C.
Verify the specific suffix 'V-W-A' against the official Renesas datasheet to confirm pinout compatibility and packaging type. Ensure the component meets RoHS requirements if applicable to your assembly process. Confirm availability status as some variants may be subject to lifecycle changes or regional distribution restrictions.
Select this component when a single-channel isolation solution with moderate speed and high voltage tolerance is required. Consider the 80 V collector-emitter voltage rating and the 40 mA forward current limit during circuit design. Verify that the DIP-4 package fits the available PCB footprint and that the operating temperature range suits the environmental conditions.
This part belongs to the PS2561 series of transistor output optocouplers from Renesas Electronics. The series is designed for general-purpose isolation applications. Variants within the series differ primarily in packaging style, such as DIP or surface-mount options, and specific performance characteristics like current transfer ratio ranges. The PS2561-1-V-W-A represents a specific configuration within this established product line.
Consult the official Renesas replacement guide for direct substitutes. Cross-reference with other manufacturers offering similar 4-pin DIP transistor output optocouplers with comparable isolation voltage and current transfer ratios. Ensure functional equivalence before substitution.