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The PS2561B-1-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a plastic DIP package. The device provides electrical isolation with a rated insulation voltage of 5000 Vrms. It supports a maximum collector-emitter voltage of 80 V and a continuous collector current of 50 mA. The component operates reliably across an ambient temperature range from -55°C to +110°C, featuring high current transfer ratio capabilities suitable for robust signal transmission in isolated circuits.
Verify the specific suffix against official Renesas documentation to confirm lead configuration and creepage distance requirements. Confirm availability status as distribution channels may list obsolete or not recommended for new design variants. Ensure the selected part matches the required insulation voltage and operating temperature specifications for the target application environment before procurement.
Select this component when a standard DIP form factor is required for through-hole assembly. Verify that the 5000 Vrms isolation rating meets the safety standards of the end equipment. Consider the 110°C operating temperature limit for thermal management planning. Ensure the NPN phototransistor output type aligns with the logic levels and drive requirements of the receiving circuitry.
This component belongs to the PS2561B series of NEPOC optocouplers. The series includes various package options such as surface mount gull-wing types and long creepage distance variants. The PS2561B-1-A specifically denotes the standard plastic DIP version. This family is designed for general-purpose isolation applications where reliable DC signal transmission is necessary between separate electrical domains.
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence for any alternative components.