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The PS2561B-1-D-A is a single-channel transistor output optoisolator manufactured by CEL. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor in a 4-DIP package. Key electrical parameters include a maximum isolation voltage of 5000 Vrms, a collector-emitter breakdown voltage of 80 V, and a typical current transfer ratio of 200%. The device supports a maximum forward current of 40 mA and operates within a temperature range of -55 °C to 110 °C.
Verify the specific manufacturer source as this component has been associated with multiple vendors including CEL and Renesas. Confirm the exact datasheet revision and pinout configuration before integration. Ensure compliance with RoHS directives if required by your design specifications. Check for any discontinued status updates from original distributors.
Select this component when high isolation voltage and wide temperature operation are critical. The 4-DIP package facilitates through-hole mounting for robust mechanical connections. Consider the current transfer ratio requirements for your specific logic level interfacing needs. Verify that the 80 V collector-emitter voltage meets your load driving capabilities.
This part belongs to the PS2561 series of photocouplers, which includes various package options such as DIP and surface mount variants. The series is designed for general-purpose isolation applications. Different suffixes indicate variations in packaging or lead-free status. The technology relies on optical coupling for electrical separation.
Direct substitutes may include other PS2561B-1 variants with different package styles like PS2561BL-1 for surface mount. Cross-reference with equivalent parts from other manufacturers ensuring matching isolation voltage and CTR specifications. Verify pin compatibility and thermal performance similarities.