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The PS2561B-1-L-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a 4-pin DIP (Gull Wing) package. The device provides an isolation voltage of 5000 Vrms, supporting high-voltage noise immunity. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum collector current of 50 mA, and a power dissipation of 150 mW. It operates reliably across a temperature range of -55°C to +110°C, making it suitable for demanding industrial environments.
Verify the specific suffix 'L-A' against the official Renesas datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as required by your assembly specifications. Check the lifecycle status, as this component may be marked as Not Recommended for New Designs (NRND). Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component when high-temperature stability is critical for the application. The 5000 Vrms isolation rating makes it appropriate for applications requiring robust galvanic separation. Consider the 80 V collector-emitter voltage limit when designing the output circuit. Verify that the 150 mW power dissipation rating accommodates the thermal conditions of the final enclosure.
This part belongs to the PS2561B series of optocouplers from Renesas Electronics. The series is designed for general-purpose isolation tasks. The 'L-A' suffix typically denotes specific packaging or tape-and-reel configurations compared to standard DIP variants. It is part of a broader family of transistor-output optoisolators used in various electronic control circuits.
Direct replacements must match the 4-DIP Gull Wing package and 5000 Vrms isolation rating. Verify that any substitute maintains the same NPN phototransistor output type and similar CTR ranges. Consult the manufacturer's substitution guide for officially recommended equivalents.