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The PS2561DL-1Y-V-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a surface-mount DIP-4 gull-wing package designed for long creepage distance. The device provides high isolation voltage of 5000 Vrms, supporting DC input signals. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum collector current of 50 mA, and a typical current transfer ratio of 160%. It operates within a temperature range of -55°C to +110°C with a power dissipation rating of 150 mW.
Verify the specific suffix 'V-A' against official Renesas documentation to confirm lead bending type and creepage specifications. Confirm RoHS compliance status through the manufacturer datasheet. Ensure the ordering part number matches the exact package variant required for the PCB layout. Check for any recent product change notices regarding manufacturing sources or material composition updates.
Select this component when a surface-mount solution with extended creepage distance is required for high-voltage isolation. The 110°C operating temperature rating makes it suitable for applications with elevated ambient heat. Verify that the 50 mA collector current limit meets the load requirements of the downstream circuitry. Consider the 3 µs rise time for switching speed adequacy in the target application.
This device belongs to the PS2561 series of NECO (NEC Optocoupler) products. The series includes various package options such as standard DIP and surface-mount variants. The DL1 designation specifically indicates the lead-bending type for surface mounting with enhanced insulation properties compared to standard packages.
PS2561DL-1-F3 is a taping version of the same functional device. PS2561BL-1-A is a similar surface-mount variant but requires verification of creepage distance and CTR specifications.