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The PS2561DL-1Y-V-F3-H-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a Gallium Arsenide (GaAs) infrared emitting diode and an NPN silicon phototransistor within a compact surface-mount package. The device provides high electrical isolation with a rated insulation voltage of 5000 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a forward current of 10 mA, and a power dissipation of 150 mW. It operates reliably across a wide temperature range from -55 °C to +100 °C.
Verify the complete part number including suffixes such as -H-A against official Renesas documentation to ensure correct packaging and compliance specifications. Confirm that the specific variant matches the required isolation voltage and package type for your design. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.
Select this component when high isolation voltage and wide temperature operation are critical requirements. Ensure the circuit design accommodates the specified forward current and collector-emitter voltage limits. Consider the surface-mount footprint dimensions during PCB layout planning to ensure proper thermal management and mechanical stability in the final assembly.
This component belongs to the PS2561 series of optocouplers, which are designed for general-purpose isolation applications. The series offers various package options and configuration variants to suit different board space and performance needs. Renesas utilizes GaAs LED technology in these devices to ensure stable light emission and reliable long-term performance under varying environmental conditions.
Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.