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The PS2561DL1-1Y-V-H-A is a single-channel transistor output optocoupler manufactured by Renesas Electronics. It integrates a GaAs infrared emitting diode and an NPN silicon phototransistor within a 4-pin DIP package. The device provides electrical isolation with a rated insulation voltage of 5000 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a maximum collector current of 50 mA, and a forward current rating of 40 mA. The typical rise and fall times are 3 µs and 5 µs, respectively. It operates within a temperature range of -55°C to +110°C.
Verify the specific suffix codes against official Renesas documentation to ensure correct pinout and packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Check for any recent product change notices that may affect specifications or availability before finalizing procurement orders.
Select this component when a single-channel isolation solution with a DIP footprint is required. Ensure the application voltage does not exceed the 80 V collector-emitter limit. Verify that the required isolation voltage meets the 5000 Vrms specification. Consider thermal management requirements given the operating temperature range up to 110°C.
This part belongs to the PS2561 series of optocouplers from Renesas Electronics. The series includes various packages such as DIP and surface-mount options. The DL1 variant specifically denotes a DIP package configuration. This family is designed for general-purpose isolation tasks in electronic circuits.
Cross-reference with other PS2561 series variants like PS2561D-1Y-V-A for package differences. Verify functional compatibility with equivalent parts from other manufacturers if sourcing alternatives. Ensure pin configurations match exactly to avoid board redesign.